Information Electrically Tunable Epsilon-Near-Zero (ENZ) Metafilm Absorbers
We will show that particularly effective electrical modulation of light absorption can be achieved by aligning the geometric resonance of the meta-atoms with the ENZ frequency of the ITO 36.
Information arXiv:2503.05670v1 [physics.optics] 7 Mar 2025
shortcomings of finite loss in real materials. These findings are intended to guide materials development and ofer valuable insights for designing on-chip optical modulators and beam
Information Ultrahigh-Performance ENZ Modulator Based on a Stack of Three
A high-performance electro-absorption optical modulator based on the epsilon-near-zero (ENZ) effect is proposed. The structure consists of a waveguide with a silicon (Si) core over which a
Information Epsilon-Near-Zero Si Slot-Waveguide Modulator
ABSTRACT: We experimentally demonstrate a broadband electro-absorption modulator exploiting indium tin oxide (ITO) as the active switching material. Si strip waveguides are fabricated and
Information Electrically tunable and switchable perfect infrared absorber based on
In this paper, a dynamically tunable and switchable perfect infrared absorber is put forward, which is composed of a gold ring array, an indium tin oxide (ITO) layer, an alumina (Al2 O 3)
Information ENZ optical modulator
What are Epsilon-Near-Zero(ENZ) materials? S. Campione, I. Brener, and F. Marquier, "Theory of epsilon-near-zero modes in ultrathin films," Physical Review B 91, 121408 (2015). Use the ENZ
Information Ultra-compact and broadband electro-absorption modulator using
In this paper, we report an ultra-compact, broadband electro-absorption (EA) modulator using an epsilon-near-zero (ENZ) indium-tin oxide (ITO). The device is fabricated on a standard silicon-on
Information Ultrafast Epsilon-Near-Zero Electroabsorption Modulators
When the plasma frequency of the accumulation layer is close to the waveguide frequency (also the optical frequency), modal field is concentrated at the ENZ layer, thus inducing large absorption.
Information The Effect of Carrier Distribution on Performance of ENZ
Since in many scientific works the uniform model of carrier distribution of Indium tin oxide (ITO) has been utilized, we want to investigate ENZ effect in ITO material and the effect of accurate carrier